2001. 2. 24 1/4 semiconductor technical data KTC3879S epitaxial planar npn transistor revision no : 2 high frequency application. hf, vhf band amplifier application. feature high power gain : g pe =29db(typ.) (f=10.7mhz) maximum rating (ta=25 1 ) dim millimeters 1. emitter 2. base 3. collector sot-23 a b c d e 2.93 0.20 1.30+0.20/-0.15 0.45+0.15/-0.05 2.40+0.30/-0.20 g 1.90 h j k l m n 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 min 1.00+0.20/-0.10 m j k e 1 2 3 h g a n c b d 1.30 max ll pp p7 + _ electrical characteristics (ta=25 1 ) note : h fe classification r:40 80, o:70 140, y:120 240 h rank type name marking lot no. r fe characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =35v, i e =0 - - 0.1 a emitter cut-off current i ebo v eb =4v, i c =0 - - 1.0 a dc current gain h fe (note) v ce =12v, i c =2ma 40 - 240 collector-emitter saturation voltage v ce(sat) i c =10ma, i b =1ma - - 0.4 v base-emitter saturation voltage v be(sat) i c =10ma, i b =1ma - - 1.0 v transition frequency f t v ce =10v, i c =1ma 100 - 400 mhz collector output capacitance c ob v cb =10v, i e =0, f=1mhz 1.4 2.0 3.2 pf collector-base time constant c c rbb ? v ce =10v, i e =-1ma, f=30mhz 10 - 50 ps power gain g pe v cc =6v, i e =-1ma, f=10.7mhz 27 29 33 db characteristic symbol rating unit collector-base voltage v cbo 35 v collector-emitter voltage v ceo 30 v emitter-base voltage v ebo 4 v collector current i c 50 ma emitter current i e -50 ma collector power dissipation p c 150 mw junction temperature t j 150 1 storage temperature range t stg -55 150 1
2001. 2. 24 2/4 KTC3879S revision no : 2 y parameters (typ.) (1) (common emitter f=455khz, ta=25 1 ) (2) (common emitter f=10.7mhz, ta=25 1 ) characteristic symbol KTC3879S-r KTC3879S-o KTC3879S-y unit collector-emitter voltage v ce 6 6 6 v emitter current i e -1 -1 -1 ma input conductance g ie 0.58 0.41 0.26 ms input capacitance c ie 53 46 38 pf output conductance g oe 1.9 2.7 4.8 s output capacitance c oe 2.6 2.8 3.6 pf forward transfer admittance |y fe | 38 38 38 ms phase angle of forward transfer admittance fe -0.79 -0.83 -0.92 . reverse transfer admittance |y re | 5.7 5.7 6.2 s phase angle of reverse transfer admittance re -90 -90 -90 . characteristic symbol KTC3879S-r KTC3879S-o KTC3879S-y unit collector-emitter voltage v ce 6 6 6 v emitter current i e -1 -1 -1 ma input conductance g ie 1.04 0.85 0.65 ms input capacitance c ie 49 43 36 pf output conductance g oe 10 15 28 s output capacitance c oe 2.7 2.9 3.6 pf forward transfer admittance |y fe | 37 37 37 ms phase angle of forward transfer admittance fe -9.6 -10.4 -11.5 . reverse transfer admittance |y re | 120 120 140 s phase angle of reverse transfer admittance re -90 -90 -90 .
2001. 2. 24 3/4 KTC3879S revision no : 3 20 reverse transfer admittance re 1k -10 -0.3 -0.1 emitter current i (ma) e emitter current i (ma) e emitter current i (ma) e y , - i y - v ce collector-emitter voltage v (v) ce collector-emitter voltage v (v) ce collector-emitter voltage v (v) 1 3 10 30 500 re reverse transfer admittance 50 10 2 30 10 3 1 -0.1 -0.3 -3 -5 1 10 5 100 -5 -3 -0.3 -0.1 1 3 10 30 300 10 re ce y ( s) re reverse transfer admittance y ( s) re reverse transfer admittance y ( s) 5 100 300 common emitter i =-1ma f=10.7mhz =-90 ta=25 c e re y r, o re re e y , - v fe fe ce y , - i fe fe e y ( s) forward transfer admittance fe y (ms) forward transfer admittance fe y (ms) -1 -3 50 100 300 500 common emitter v =6v f=10.7mhz ta=25 c ce y r, o r,o y y re re -500 -300 -100 -50 -1k -20 admittance ( ) re phase angle of reverse transfer 5 5 30 y r, o 5 50 100 -1 -0.3 -0.1 -3 common emitter i =-1ma f=455khz ta=25 c e y o r r, o, y y fe fe -1 3 5 10 20 ce y r, o -1 30 50 ce ta=25 c f=455khz v =6v common emitter r, o, y y o fe r fe y y - v re ce y - i re e 30 -5 -3 -10 -0.5 -1 admittance ( ) fe phase angle of forward transfer admittance ( ) fe phase angle of forward transfer common emitter i =-1ma f=455mhz =-90 ta=25 c e re common emitter v =6v f=455mhz =-90 ta=25 c re
2001. 2. 24 4/4 KTC3879S revision no : 3 emitter current i (ma) e ce collector-emitter voltage v (v) y , - i fe fe e y , - v fe fe ce forward transfer admittance fe y (ms) forward transfer admittance fe y (ms) admittance ( ) fe phase angle of forward transfer admittance ( ) fe phase angle of forward transfer 1 3 10 30 300 20 common emitter v =6v f=10.7mhz ta=25 c ce fe fe y 10 2 100 -10 -3 -0.3 -0.1 50 100 common emitter i =-1ma f=10.7mhz ta=25 c e y o r y fe r, o, y fe -10 -5 -2 -30 -1 5 30 50 r, o, y y o r -50 -30 -5 -100 -2 -10
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